SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

To manufacture a semiconductor device using an oxide semiconductor with high reliability and less variation in electrical characteristics, objects are to provide a method for manufacturing a semiconductor device with which an oxide semiconductor film with a fairly uniform thickness is formed, a manufacturing apparatus, and a method for manufacturing a semiconductor device with the manufacturing apparatus. In order to form an oxide semiconductor film with a fairly uniform thickness with use of a sputtering apparatus, an oxide semiconductor film the thickness uniformity of which is less than ±3%, preferably less than or equal to ±2% is formed by using a manufacturing apparatus in which a deposition chamber is set to have a reduced pressure atmosphere, preferably, to have a high degree of vacuum and power is adjusted to be applied uniformly to the entire surface of a substrate during film deposition.

主权项

1. A method for manufacturing a semiconductor device comprising the step of sputtering a material to form an oxide semiconductor layer over a substrate with use of a sputtering apparatus,
wherein the sputtering apparatus comprises: a plurality of magnets; and a target holder over the plurality of magnets, wherein the plurality of magnets and a plurality of target groups over the target holder are independently swung during the step of sputtering, and wherein a thickness uniformity of the oxide semiconductor layer is less than ±3%.