摘要 |
<p>A magnetic tunnel junction ("MTJ") device comprises a trench in a substrate (602); an MTJ structure within the trench, the MTJ structure comprising a bottom electrode (606); a fixed layer; a tunnel barrier layer; a free layer; and a top electrode (610); wherein the bottom electrode (606) is coupled to a bottom surface of the fixed layer and extends along at least one sidewall of the fixed layer and wherein the trench comprises one or more sidewalls that enclose and isolate the MTJ structure from at least one other MTJ structure.</p> |