发明名称 Magnetic tunnel junction structure
摘要 <p>A magnetic tunnel junction ("MTJ") device comprises a trench in a substrate (602); an MTJ structure within the trench, the MTJ structure comprising a bottom electrode (606); a fixed layer; a tunnel barrier layer; a free layer; and a top electrode (610); wherein the bottom electrode (606) is coupled to a bottom surface of the fixed layer and extends along at least one sidewall of the fixed layer and wherein the trench comprises one or more sidewalls that enclose and isolate the MTJ structure from at least one other MTJ structure.</p>
申请公布号 EP2804230(A1) 申请公布日期 2014.11.19
申请号 EP20140172443 申请日期 2009.02.23
申请人 QUALCOMM INCORPORATED 发明人 LI, XIA
分类号 H01L43/08;G11C11/16 主分类号 H01L43/08
代理机构 代理人
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