SEMICONDUCTOR DEVICE HAVING A JUMPER PATTERN AND A BLOCKING PATTERN

摘要

Described is a semiconductor device which includes: a substrate which includes a transistor region, a gate structure which is formed on the transistor region of the substrate, a first interlayer dielectric layer which covers the gate structure, a blocking pattern which is formed on the first interlayer dielectric layer, and a jumper pattern which is formed on the blocking pattern. The jumper pattern includes contact plugs which vertically pass through the first interlayer dielectric layer and are in contact with the substrate exposed to both sides of the gate structure and a jumper part which electrically connects the contact plugs.