发明名称 電力変換装置および半導体スイッチング素子の制御回路
摘要 PROBLEM TO BE SOLVED: To provide a power conversion device having a gate driving circuit with a stable high reliability. SOLUTION: In a power conversion device configured by a semiconductor switching element 10, a control circuit that controls each control electrode of the semiconductor switching element 10, has: voltage detection means 21 that generates a first voltage signal proportional to a voltage applied between main electrodes of the semiconductor switching element 10; a low-pass filter 22 that extracts a low-frequency signal of the first voltage signal to generate a second voltage signal; and subtraction means 23 that acquires a difference between the first and second voltage signals as a third voltage signal. By adjusting a voltage to be applied to the control electrodes of the semiconductor switching element 10 depending on the third voltage signal, the power conversion device having a gate driving circuit with a stable high reliability is provided. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5627316(B2) 申请公布日期 2014.11.19
申请号 JP20100146939 申请日期 2010.06.28
申请人 发明人
分类号 H02M1/08 主分类号 H02M1/08
代理机构 代理人
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