| 摘要 |
<p>Provided is a thin film transistor substrate which has high charge mobility and obtains a uniform electrical property to a large-sized display device and a method of fabricating the same. The thin film transistor substrate includes an oxide semiconductor layer which is formed on an insulating layer and has a channel part, a gate electrode which is overlapped with the oxide semiconductor layer, a gate insulating layer which is formed between the oxide semiconductor layer and the gate electrode, and a protection layer which is formed on the upper part of the gate electrode and the oxide semiconductor layer. Here, the gate insulating layer or/and the protection layer include(s) fluorine-based silicon.</p> |
