发明名称 |
Radiation hardened circuit |
摘要 |
<p>The invention concerns a circuit comprising: a data storage element (102); first and second input circuitry (104, 104') coupled respectively to first and second inputs (IN1, IN2) of the data storage element and each comprising a plurality of components adapted to generate, as a function of an initial signal (IN), first and second input signals respectively provided to said first and second inputs; wherein the data storage element comprises a first storage node and is configured such that a voltage state stored at said first storage node is protected from a change in only one of said first and second input signals by being determined by the conduction state of a first transistor coupled to the first storage node and controlled based on said first input signal and by the conduction state of a second transistor coupled to the first storage node and controlled based on said second input signal.</p> |
申请公布号 |
EP2804179(A1) |
申请公布日期 |
2014.11.19 |
申请号 |
EP20130305644 |
申请日期 |
2013.05.17 |
申请人 |
STMICROELECTRONICS (CROLLES 2) SAS;STMICROELECTRONICS PVT. LTD;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;UNIVERSITÉ D'AIX-MARSEILLE |
发明人 |
GASIOT, GILLES;CLERC, SYLVAIN;YOUSUF, JUNAID;GLORIEUX, MAXIMILIEN |
分类号 |
G11C5/00;H03K3/037;H03K3/356;H03L7/089 |
主分类号 |
G11C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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