发明名称 Radiation hardened circuit
摘要 <p>The invention concerns a circuit comprising: a data storage element (102); first and second input circuitry (104, 104') coupled respectively to first and second inputs (IN1, IN2) of the data storage element and each comprising a plurality of components adapted to generate, as a function of an initial signal (IN), first and second input signals respectively provided to said first and second inputs; wherein the data storage element comprises a first storage node and is configured such that a voltage state stored at said first storage node is protected from a change in only one of said first and second input signals by being determined by the conduction state of a first transistor coupled to the first storage node and controlled based on said first input signal and by the conduction state of a second transistor coupled to the first storage node and controlled based on said second input signal.</p>
申请公布号 EP2804179(A1) 申请公布日期 2014.11.19
申请号 EP20130305644 申请日期 2013.05.17
申请人 STMICROELECTRONICS (CROLLES 2) SAS;STMICROELECTRONICS PVT. LTD;CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE;UNIVERSITÉ D'AIX-MARSEILLE 发明人 GASIOT, GILLES;CLERC, SYLVAIN;YOUSUF, JUNAID;GLORIEUX, MAXIMILIEN
分类号 G11C5/00;H03K3/037;H03K3/356;H03L7/089 主分类号 G11C5/00
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