| 摘要 |
<p>A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first semiconductor layer doped with a first dopant while including a first region and a second region stepped relative to the first region, a second semiconductor layer doped with a second dopant different from the first dopant while disposed over the second region, and an active layer disposed between the first and second semiconductor layers, a first electrode disposed on the first region, and a functional member disposed between one side surface of the light emitting structure adjacent to the first electrode and the first electrode while being disposed at the first region, wherein the functional member has a thickness greater than a thickness of the first electrode and less than a thickness of the light emitting structure, with respect to a surface of the first region.
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