发明名称 INTEGRATING THROUGH SUBSTRATE VIAS INTO MIDDLE-OF-LINE LAYERS OF INTEGRATED CIRCUITS
摘要 <p>A semiconductor wafer has an integrated through substrate via (TSV). The semiconductor wafer includes a substrate. A dielectric layer may be formed on a first side of the substrate. A through substrate via may extend through the dielectric layer and the substrate. The through substrate via may include a conductive material and an isolation layer. The isolation layer may at least partially surround the conductive material. The isolation layer may have a tapered portion.</p>
申请公布号 EP2803081(A1) 申请公布日期 2014.11.19
申请号 EP20130703655 申请日期 2013.01.12
申请人 QUALCOMM INCORPORATED 发明人 RAMACHANDRA, VIDHYA;GU, SHIQUN
分类号 H01L21/768;H01L23/48 主分类号 H01L21/768
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