发明名称 |
INTEGRATING THROUGH SUBSTRATE VIAS INTO MIDDLE-OF-LINE LAYERS OF INTEGRATED CIRCUITS |
摘要 |
<p>A semiconductor wafer has an integrated through substrate via (TSV). The semiconductor wafer includes a substrate. A dielectric layer may be formed on a first side of the substrate. A through substrate via may extend through the dielectric layer and the substrate. The through substrate via may include a conductive material and an isolation layer. The isolation layer may at least partially surround the conductive material. The isolation layer may have a tapered portion.</p> |
申请公布号 |
EP2803081(A1) |
申请公布日期 |
2014.11.19 |
申请号 |
EP20130703655 |
申请日期 |
2013.01.12 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
RAMACHANDRA, VIDHYA;GU, SHIQUN |
分类号 |
H01L21/768;H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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