SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

According to an embodiment, a nitride semiconductor wafer comprises: a silicon substrate, a buffer part installed on the silicon substrate, and a functional layer which is installed on the buffer part and contains nitride semiconductors. The buffer part includes first to nth buffer layers (n is an integer number of four or more) containing nitride semiconductors. The i buffer layer (i is an integer of one or more and less than n) among the first to nth buffer layers has a lattice length of Wi in a first direction parallel to the main surface of the first buffer layer. The (i+1) buffer layer installed on the i buffer layer has a lattice length of W (i+1) in a first direction. The i buffer layer and the (i+1) buffer layer among the first to nth buffer layers satisfy (W(i+1)-Wi)/Wi<=0.008.