| 摘要 |
<p>An electrostatic chuck (2) includes a substrate (3) having a wafer-installing face and a back face on an opposite side from the wafer-installing face, an electrostatically chucking electrode (4A,4B) buried in the substrate, and an insulating layer (7) provided at the back face of the substrate, the substrate including a dielectric layer (3) providing at least the wafer-installing face and surrounding the electrostatically checking electrode, and said insulating layer (7) including an insulating material having a volume resistivity larger than that of the dielectric layer. The insulating layer (7) avoids reduction of wafer-holding voltage due to a metal cooling member (5). <IMAGE></p> |
