发明名称 Method of forming electrode structure for capacitive touch sensor
摘要 A method of forming an electrode structure for a capacitive touch sensor in a transparent conductive layer 7 located on a transparent non-conductive layer 15 which is located on a colour filter layer by a direct write laser scribing process uses a pulsed solid state laser 20 having, at the substrate, a wavelength in the range 257 nm to 266 nm, a pulse length in the range 50 fs to 50 ns and a top hat beam profile having a uniformity of power or energy density of less than 10%, such that grooves 21 are formed in the transparent conductive layer to electrically isolate areas on opposite sides of each groove with substantially no damage to the transparent non-conductive layer or the colour filter layer beneath the transparent conductive layer. Also disclosed is an apparatus arranged to carry out the method of the invention.
申请公布号 GB2514084(A) 申请公布日期 2014.11.19
申请号 GB20130003085 申请日期 2013.02.21
申请人 M-SOLV LIMITED 发明人 CAMILO PRIETO RIO;YUK KWAN CHAN
分类号 B23K26/36;B23K26/06 主分类号 B23K26/36
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