发明名称 Siクラスレートの製造方法
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a II type silicon clathrate involving sodium stably in large quantities. SOLUTION: This method for producing a silicon clathrate includes a positive-pressure heating treatment step of heating a silicon wafer and Na in the mixed state at≤650°C to produce a compound comprising Si and Na, and a negative-pressure heating treatment step of heating the produced compound comprising Si and Na for one hour or longer at a temperature of≥300°C and≤450°C under a negative pressure of≤10<SP POS="POST">-2</SP>Pa. Na is preferably supplied so that the mole ratio to Si used for generating the silicon clathrate becomes >1.0. COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5626896(B2) 申请公布日期 2014.11.19
申请号 JP20110091814 申请日期 2011.04.18
申请人 发明人
分类号 C01B33/02 主分类号 C01B33/02
代理机构 代理人
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