| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of achieving uniformity of current density by promoting current diffusion in a semiconductor film in a lateral direction and a stacked direction and capable of easily controlling color mixture of light using a phosphor, in the semiconductor light-emitting element in which an n-electrode and a p-electrode are provided on the same surface side of the semiconductor film. <P>SOLUTION: A semiconductor light-emitting element includes: a semiconductor film including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type, and an active layer provided between the first semiconductor layer and the second semiconductor layer; a first electrode that is embedded in the first semiconductor layer and has an embedded portion annularly extending along the outer edge of the semiconductor film; a second electrode provided on a first surface of the second semiconductor layer; and a current induction portion that is provided in the first semiconductor layer and has a higher electrical conductivity than that of the first semiconductor layer. The active layer is provided inside an annular pattern of the first electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT |
