发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF |
摘要 |
<p>A semiconductor device which can suppress the influence of the external electric charge and can be efficiently manufactured is provided. The semiconductor device is provided with an active region in which a semiconductor element is disposed and a termination region between the active region and an edge surface of the semiconductor substrate. An insulating layer is disposed on at least a part of an upper surface of the termination region. A plurality of floating electrodes is disposed at an interval in the insulating layer in a direction from the active region toward the edge surface of the semiconductor substrate, and a width of the plurality of floating electrodes in a thickness direction of the semiconductor substrate is greater than a width of the plurality of floating electrodes in the direction from the active region toward the edge surface of the semiconductor substrate.</p> |
申请公布号 |
EP2804214(A1) |
申请公布日期 |
2014.11.19 |
申请号 |
EP20120865395 |
申请日期 |
2012.11.27 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
HIRABAYASHI, YASUHIRO;SAKAKIBARA, AKINORI |
分类号 |
H01L29/06;H01L21/336;H01L29/739;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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