发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
摘要 <p>A semiconductor device which can suppress the influence of the external electric charge and can be efficiently manufactured is provided. The semiconductor device is provided with an active region in which a semiconductor element is disposed and a termination region between the active region and an edge surface of the semiconductor substrate. An insulating layer is disposed on at least a part of an upper surface of the termination region. A plurality of floating electrodes is disposed at an interval in the insulating layer in a direction from the active region toward the edge surface of the semiconductor substrate, and a width of the plurality of floating electrodes in a thickness direction of the semiconductor substrate is greater than a width of the plurality of floating electrodes in the direction from the active region toward the edge surface of the semiconductor substrate.</p>
申请公布号 EP2804214(A1) 申请公布日期 2014.11.19
申请号 EP20120865395 申请日期 2012.11.27
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 HIRABAYASHI, YASUHIRO;SAKAKIBARA, AKINORI
分类号 H01L29/06;H01L21/336;H01L29/739;H01L29/78 主分类号 H01L29/06
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