| 摘要 |
<p>PURPOSE: A manufacturing method of an oxide thin film transistor which amorphous zinc oxide group semiconductor is used for active layer is provided to reduce the number of masks by at the same time patterning the channel protection layer with the active layer. CONSTITUTION: A gate electrode is formed on a substrate(110). A gate insulating layer(115) is formed on the substrate. An active layer consisting of the amorphous zinc oxide group semiconductor is formed in the gate electrode upper part by using a diffraction mask. A channel protection layer is formed on the channel region of the active layer. A source electrode and a drain electrode which electrically connect to the source area and the drain area is formed at the upper part of the active layer.</p> |
