| 摘要 |
PROBLEM TO BE SOLVED: To provide a doped III-N bulk crystal or a self-support doped III-N substrate which have a good crystal quality and a uniform dopant disposition in a plane in the growth direction and/or the direction perpendicular thereto. SOLUTION: In a doped III-N crystal layer or a doped III-N bulk crystal, (a) when micro Raman mapping is carried out (i) in the direction parallel with the growth surface and/or (ii) in the growth direction, the standard deviation of the measured frequency position of the LPP<SP POS="POST">+</SP>mode is≤5% in the case of (i) and≤5% in the case of (ii); (b) when MDP mapping is carried out in (i) and/or (ii), the standard deviation of the light conductivity signal is≤5% in the case of (i) and≤5% in the case of (ii); or (c) when micro photoluminescence mapping is carried out in (i) and/or (ii), the standard deviation of the line width of D<SP POS="POST">0</SP>X transition is≤5% in the case of (i) and≤5% in the case of (ii). COPYRIGHT: (C)2013,JPO&INPIT |
