| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon oxynitride film deposition method capable of depositing a silicon oxynitride film by a stable composition. SOLUTION: The composition of a silicon oxynitride film can be easily controlled by changing power to be applied to a target or changing a flow rate ratio of nitrogen gas to argon gas as reactive gas in sputtering using a target material 13c composed of silicon monoxide and target materials 13a, 13b composed of silicon dioxide. COPYRIGHT: (C)2012,JPO&INPIT |
