| 摘要 |
PROBLEM TO BE SOLVED: To suppress variation in the characteristics due to temperature variation during heat treatment process, and to control the process to ensure a high resistivity. SOLUTION: A method for producing an amorphous oxide thin film includes a deposition step for depositing an amorphous oxide thin film containing In, Ga and Zn, where the mol fraction of Ga for the sum total of In and Ga satisfies a relation of 0.50<Ga/(In+Ga), on a substrate, and a heat treatment step for heat treating the amorphous oxide thin film at a temperature of 100-150°C or 350-600°C following to the deposition step if the mol fraction of Ga of the amorphous oxide thin film satisfies a relation of 0.50<Ga/(In+Ga)<0.75, and for heat treating the amorphous oxide thin film at a temperature of 100-200°C or 350-600°C following to the deposition step if the mol fraction of Ga of the amorphous oxide thin film satisfies a relation of 0.75≥Ga/(In+Ga). COPYRIGHT: (C)2012,JPO&INPIT |
