发明名称 レーザ加工方法
摘要 PROBLEM TO BE SOLVED: To suppress deterioration of an electronic element formed on a substrate when plural reform regions are formed in intersecting directions in the substrate by using a laser beam. SOLUTION: In a reform region forming step of applying a laser beam 64 from a substrate back surface 11b side of a wafer-like substrate 11 to an element group formed substrate 20 having a laminate semiconductor layer 12 constituting plural semiconductor light emitting elements 21 formed on a substrate surface 11a of the wafer-like substrate 11 to form, in the substrate, a first reform region L1 and a third reform region L3 extending in a y-direction along the surface of the substrate 11 and a second reform region L2 and a fourth reform region L4 extending in an x-direction which is along the surface of the substrate 11 and different from the y-direction, the first reform region L1, the second reform region L2, the third reform region L3 and the fourth reform region L4 are successively formed from a nearer side to a farther side with respect to the substrate surface 11a of the substrate 11 (from a farther side to a nearer side with respect to the substrate back surface 11b) in this order. COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP5625521(B2) 申请公布日期 2014.11.19
申请号 JP20100137568 申请日期 2010.06.16
申请人 发明人
分类号 H01L21/301;B23K26/40;B28D5/00 主分类号 H01L21/301
代理机构 代理人
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