| 摘要 |
Insulated gate field effect transistor comprising a first conductivity type well (2) on a second conductivity type substrate (1), the well (2) being laterally divided into well regions (2) by second conductivity type base regions (6). First conductivity type source regions (7) and second conductivity type base contact regions (10) formed in the base region (6), and a first conductivity type drain region (9) formed in the well. An array of said transistors, a method of forming the transistor or an array thereof, and an ink jet printer with a print head comprising the transistor or transistor array. |
