| 摘要 |
PROBLEM TO BE SOLVED: To provide a circuit device in which a graphene film and a metal electrode are bonded well electrically by reducing the contact resistance between them while limiting the contact area (occupied area on a substrate) between the graphene film and metal electrode. SOLUTION: The circuit device utilizing a graphene film of single layer or multiple layers has a graphene film, a first metal electrode bonded directly to the graphene film, and a second metal electrode bonded directly to the graphene film. 90% or more of the graphene film in a region bonded to the first metal electrode, and 90% or more of the graphene film in a region bonded to the second metal electrode are heavily doped with p-type or n-type. COPYRIGHT: (C)2012,JPO&INPIT |
