| 摘要 |
<p>The invention relates to a method for manufacturing a III-V device and the III-V device obtained thereof. The method comprises providing a semiconductor substrate comprising at least a recess area, forming a buffer layer overlying the semiconductor substrate in the recess area, wherein the buffer layer comprises a binary III-V compound formed at a first growth temperature by selective epitaxial growth from a group III precursor and a group V precursor in the presence of a carrier gas, and wherein the first growth temperature is equal or slightly higher than a cracking temperature of each of the group III precursor and of the group V precursor.</p> |
