Verify or read pulse for phase change memory and switch

摘要

Embodiments disclosed herein may relate to applying verify or read pulses for phase change memory and switch (PCMS) devices. The read pulses may be applied at a first voltage for a first period of time. A threshold event for the phase change memory cell may be detected during a sense window. The sense window may close after the expiration of the first period of time for which the read pulses are applied.

主权项

1. A method, comprising:
applying a read or verify pulse to a phase change memory cell, wherein the read or verify pulse reaches approximately a first voltage level for a first period of time; and detecting a threshold event for the phase change memory cell during a sense window, wherein the sense window is a time period for which a sensing circuit is configured to detect the threshold event, wherein the sense window opens after the read or verify pulse reaches the first voltage level, wherein the read or verify pulse is at or below the first voltage level while the sense window is open, and wherein the sense window closes after an expiration of the first period of time.