Polysilicon design for replacement gate technology

摘要

The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.

主权项

1. An integrated circuit, comprising:
a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate, the passive polysilicon device including:
a conductive layer formed over the semiconductor substrate and formed of a conductive material;a polysilicon feature formed on the conductive layer and formed of a polysilicon material, the polysilicon material being different than the conductive material;a sidewall spacer disposed along a sidewall of the polysilicon feature and a sidewall of the conductive layer; anda plurality of electrodes embedded in the polysilicon feature, wherein a portion of the polysilicon feature extends from an edge of one of the plurality of electrodes to the sidewall spacer, wherein the edge faces the sidewall spacer.