High voltage semiconductor device

摘要

A high voltage semiconductor device includes a substrate, an insulating layer positioned on the substrate, and a silicon layer positioned on the insulating layer. The silicon layer further includes at least a first doped strip, two terminal doped regions formed respectively at two opposite ends of the silicon layer and electrically connected to the first doped strip, and a plurality of second doped strips. The first doped strip and the terminal doped regions include a first conductivity type, the second doped strips include a second conductivity type, and the first conductivity type and the second conductivity type are complementary. The first doped strip and the second doped strips are alternately arranged.

主权项

1. A high voltage (HV) semiconductor device comprising:
a substrate; an insulating layer positioned on the substrate; and a silicon layer positioned on the insulating layer, the silicon layer further comprising:
at least a first doped strip comprising a first conductivity type;two terminal doped regions formed respectively at two opposite ends of the silicon layer and electrically connected to the first doped strip, the terminal doped regions respectively comprising the first conductivity type; anda plurality of second doped strips comprising a second conductivity type complementary to the first conductivity type, the second doped strips and the first doped strip are alternately arranged, wherein the second doped strips contact the insulating layer and surround the first doped strip.