发明名称 |
Method of fabricating a thin-film device |
摘要 |
A method of forming a thin-film device includes forming an oxide-semiconductor film formed on the first electrical insulator, and forming a second electrical insulator formed on the oxide-semiconductor film, the oxide-semiconductor film defining an active layer. The oxide-semiconductor film is comprised of a first interface layer located at an interface with the first electrical insulating insulator, a second interface layer located at an interface with the second electrical insulator, and a bulk layer other than the first and second interface layers. The method further includes oxidizing the oxide-semiconductor film to render a density of oxygen holes in at least one of the first and second interlayer layers is smaller than a density of oxygen holes in the bulk layer. |
申请公布号 |
US8889480(B2) |
申请公布日期 |
2014.11.18 |
申请号 |
US201313837879 |
申请日期 |
2013.03.15 |
申请人 |
NLT Technologies, Ltd. |
发明人 |
Takechi Kazushige;Nakata Mitsuru |
分类号 |
H01L21/00;H01L29/786;H01L29/49;H01L29/66 |
主分类号 |
H01L21/00 |
代理机构 |
Scully, Scott, Murphy & Presser, P.C. |
代理人 |
Scully, Scott, Murphy & Presser, P.C. |
主权项 |
1. A method of fabricating a thin-film device, including:
forming an oxide-semiconductor film on a first electrical insulator; forming a second electrical insulator on said oxide-semiconductor film, said oxide-semiconductor film defining an active layer, said oxide-semiconductor film being comprised of a first interface layer located at an interface with said first electrical insulating insulator, a second interface layer located at an interface with said second electrical insulator, and a bulk layer other than said first and second interface layers; and oxidizing said oxide-semiconductor film to render a density of oxygen holes in at least one of said first and second interlayer layers smaller than a density of oxygen holes in said bulk layer, wherein said first electrical insulator, said oxide-semiconductor film, and said second electrical insulator are formed by forming, in sequence, a gate metal film, a gate insulating film as said first electrical insulator, said oxide-semiconductor film, a source/drain metal file, and a protection insulating film as said second electrical insulator, and wherein said oxidizing and the formation of said oxide-semiconductor film are carried out in this order without exposing said oxide-semiconductor film to atmosphere after the formation of said gate insulating film. |
地址 |
Kanagawa JP |