| 发明名称 | Plasma density control | ||
| 摘要 | A first embodiment is a method for semiconductor processing. The method comprises forming a component on a wafer in a chamber; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. The forming the component includes using a plasma. The material can have various shapes, compositions, thicknesses, and/or placements on the surface of the chamber. Other embodiments include a chamber having a material on a surface to control a plasma uniformity. | ||
| 申请公布号 | US8889435(B2) | 申请公布日期 | 2014.11.18 |
| 申请号 | US201113248955 | 申请日期 | 2011.09.29 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Wu Wen-Sheng;Chen Fei-Fan;Shen Chia-I;Chiu Hua-Sheng |
| 分类号 | H01L21/66;H01J37/32 | 主分类号 | H01L21/66 |
| 代理机构 | Slater and Matsil, L.L.P. | 代理人 | Slater and Matsil, L.L.P. |
| 主权项 | 1. A method for semiconductor processing, the method comprising: forming a component on a wafer in a chamber, the forming including using a plasma; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. | ||
| 地址 | Hsin-Chu TW | ||