发明名称 Porous oxide catalyst and method of preparing the porous oxide catalyst
摘要 A porous oxide catalyst includes porous oxide, and an oxygen vacancy-inducing metal which induces an oxygen vacancy in a lattice structure of a porous metal oxide.
申请公布号 US8889078(B2) 申请公布日期 2014.11.18
申请号 US201113048382 申请日期 2011.03.15
申请人 Samsung Electronics Co., Ltd. 发明人 Ji Sang-min;Lee Hyun-chul;Lee Doo-hwan;Jin Seon-ah
分类号 B01J23/00;B01J21/00;B01J20/00;B01D50/00;B01D53/34;B01J37/02;B01J37/08;B01J35/10;B01D53/86;B01J37/00;B01J23/83;B01J23/89;B01J37/03 主分类号 B01J23/00
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP
主权项 1. A porous oxide catalyst comprising: a porous metal oxide; an oxygen vacancy-inducing metal that induces an oxygen vacancy in a lattice structure of the porous metal oxide; and a mesopore having an average diameter of about 2 to about 50 nanometers, wherein the porous metal oxide is at least one oxide of at least one of a Group IV element, a Group V element, a Group VI element, a Group VIII element, a Group XI element, a Group XII element, a lanthanide element, aluminum, gallium, indium, thallium, silicon, germanium, tin, lead, phosphorus, arsenic, antimony, or bismuth; and wherein the oxygen vacancy-inducing metal is at least one of titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), zirconium (Zr), niobium (Nb), ruthenium (Ru), silver (Ag), cadmium (Cd), indium (In), tin (Sn), tantalum (Ta), tungsten (W), iridium (Ir), gold (Au), lead (Pb), or bismuth (Bi).
地址 KR