发明名称 Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method
摘要 A lithographic apparatus is disclosed in which a specific coating is applied to a specific surface. The coating is made from at least 99 wt % of at least one of the following: a transition metal oxide; a poor metal oxide, sulfide or selenide; a compound with the formula ATiOn where A is an element from Group 2 of the Periodic Table; or TiO2 doped with a metal from Group 3, 5 or 7 of the Periodic Table, wherein the coating is less than or equal to 49 nm thick.
申请公布号 US8891053(B2) 申请公布日期 2014.11.18
申请号 US200912555301 申请日期 2009.09.08
申请人 ASML Netherlands B.V. 发明人 Dziomkina Nina Vladimirovna;Ten Kate Nicolaas;Van Der Graaf Sandra;Castelijns Henricus Jozef
分类号 G03B27/52;G03F7/20;C23C16/455 主分类号 G03B27/52
代理机构 Pillsbury Winthrop Shaw Pittman LLP 代理人 Pillsbury Winthrop Shaw Pittman LLP
主权项 1. A lithographic apparatus comprising: a system configured to transfer a pattern to a substrate; and a coating of a photocatalyst adhered on a surface of a component of the lithographic apparatus, the coating comprising a bi-layer having the photocatalyst as a base layer and having an overlying layer, exposed to the environment, to shield the photocatalyst from the environment, wherein the overlying layer is thicker than the base layer.
地址 Veldhoven NL