发明名称 |
Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method |
摘要 |
A lithographic apparatus is disclosed in which a specific coating is applied to a specific surface. The coating is made from at least 99 wt % of at least one of the following: a transition metal oxide; a poor metal oxide, sulfide or selenide; a compound with the formula ATiOn where A is an element from Group 2 of the Periodic Table; or TiO2 doped with a metal from Group 3, 5 or 7 of the Periodic Table, wherein the coating is less than or equal to 49 nm thick. |
申请公布号 |
US8891053(B2) |
申请公布日期 |
2014.11.18 |
申请号 |
US200912555301 |
申请日期 |
2009.09.08 |
申请人 |
ASML Netherlands B.V. |
发明人 |
Dziomkina Nina Vladimirovna;Ten Kate Nicolaas;Van Der Graaf Sandra;Castelijns Henricus Jozef |
分类号 |
G03B27/52;G03F7/20;C23C16/455 |
主分类号 |
G03B27/52 |
代理机构 |
Pillsbury Winthrop Shaw Pittman LLP |
代理人 |
Pillsbury Winthrop Shaw Pittman LLP |
主权项 |
1. A lithographic apparatus comprising:
a system configured to transfer a pattern to a substrate; and a coating of a photocatalyst adhered on a surface of a component of the lithographic apparatus, the coating comprising a bi-layer having the photocatalyst as a base layer and having an overlying layer, exposed to the environment, to shield the photocatalyst from the environment, wherein the overlying layer is thicker than the base layer. |
地址 |
Veldhoven NL |