Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface

摘要

A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface.

主权项

1. A non-planar field effect transistor (FET), comprising:
a source region and a drain region with a III-V semiconductor channel region disposed there between; a gate dielectric layer disposed over the semiconductor channel region, wherein the gate dielectric layer comprises a metal oxide, and further comprises nitrogen dopants incorporated in the gate dielectric layer, the nitrogen dopants are proximal an interface between the gate dielectric and the III-V semiconductor channel region; and a gate electrode disposed over the gate dielectric layer.