| 摘要 |
Disclosed is a semiconductor device comprising a semiconductor substrate including first, second and third surfaces, the second surface being placed above the first surface, the third surface having first and second edges connecting to the first and second surfaces, respectively; an isolation region including an insulator and formed on the first and third surfaces; an active region including the second surface and fenced with the insulator of the isolation region; and first and second semiconductor pillars each protruding upwardly from the second surface in the active region, wherein the first semiconductor pillar is thinner than the second semiconductor pillar. |
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate including first, second and third surfaces, the second surface being placed above the first surface, the third surface having first and second edges connecting to the first and second surfaces, respectively; an isolation region including an insulator and formed on the first and third surfaces; an active region including the second surface and fenced with the insulator of the isolation region; and first and second semiconductor pillars each protruding upwardly from the second surface in the active region, wherein the first semiconductor pillar is thinner than the second semiconductor pillar. |
