发明名称 Semiconductor light emitting device and method for manufacturing the same
摘要 According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include applying a resin liquid onto a first major surface of a workpiece. The workpiece has the first major surface and includes a plurality of element units and a resin layer holding the plurality of element units. The method causes the particles in the resin liquid to sink and forms a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece. The method raises a temperature of the workpiece to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion. In addition, the method divides the optical layer and the resin layer for the plurality of element units.
申请公布号 US8890199(B2) 申请公布日期 2014.11.18
申请号 US201314027668 申请日期 2013.09.16
申请人 Kabushiki Kaisha Toshiba 发明人 Koizumi Hiroshi;Naka Tomomichi
分类号 H01L33/50;H01L33/58;H01L33/00 主分类号 H01L33/50
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A method for manufacturing a semiconductor light emitting device comprising: applying a resin liquid onto a first major surface of a workpiece, the workpiece having the first major surface and including a plurality of element units aligned in a plane parallel to the first major surface and a resin layer holding the plurality of element units, each of the plurality of element units including: a conductive first columnar unit extending in a first direction perpendicular to the first major surface;a conductive second columnar unit provided apart from the first columnar unit in a second direction parallel to the first major surface and extending in the first direction; anda light emitting unit including: a first semiconductor layer of a first conductivity type including a first semiconductor portion opposed to at least part of the first columnar unit and a second semiconductor portion opposed to at least part of the second columnar unit;a second semiconductor layer of a second conductivity type provided between the second columnar unit and the second semiconductor portion; anda light emitting layer provided between the second semiconductor portion and the second semiconductor layer, the resin liquid including a light transmissive resin and a plurality of particles dispersed in the light transmissive resin and configured to absorb at least part of a first light emitted from the light emitting layer and emit a second light of a wavelength different from a wavelength of the first light; causing the plurality of particles in the resin liquid to sink while keeping a state where a temperature of the workpiece on which the resin liquid is applied is raised to a first temperature and forming a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece and including the particle in a concentration higher than a concentration of the particle in the first region; raising a temperature of the workpiece on which the first region and the second region are formed to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion, the first portion being formed from the first region, the second portion being formed from the second region and including the particle at a concentration higher than a concentration of the particle in the first portion, there being no seam between the first portion and the second portion; and dividing the optical layer and the resin layer for the plurality of element units.
地址 Minato-ku JP