发明名称 |
Semiconductor light emitting device and method for manufacturing the same |
摘要 |
According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include applying a resin liquid onto a first major surface of a workpiece. The workpiece has the first major surface and includes a plurality of element units and a resin layer holding the plurality of element units. The method causes the particles in the resin liquid to sink and forms a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece. The method raises a temperature of the workpiece to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion. In addition, the method divides the optical layer and the resin layer for the plurality of element units. |
申请公布号 |
US8890199(B2) |
申请公布日期 |
2014.11.18 |
申请号 |
US201314027668 |
申请日期 |
2013.09.16 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Koizumi Hiroshi;Naka Tomomichi |
分类号 |
H01L33/50;H01L33/58;H01L33/00 |
主分类号 |
H01L33/50 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method for manufacturing a semiconductor light emitting device comprising:
applying a resin liquid onto a first major surface of a workpiece, the workpiece having the first major surface and including a plurality of element units aligned in a plane parallel to the first major surface and a resin layer holding the plurality of element units, each of the plurality of element units including:
a conductive first columnar unit extending in a first direction perpendicular to the first major surface;a conductive second columnar unit provided apart from the first columnar unit in a second direction parallel to the first major surface and extending in the first direction; anda light emitting unit including:
a first semiconductor layer of a first conductivity type including a first semiconductor portion opposed to at least part of the first columnar unit and a second semiconductor portion opposed to at least part of the second columnar unit;a second semiconductor layer of a second conductivity type provided between the second columnar unit and the second semiconductor portion; anda light emitting layer provided between the second semiconductor portion and the second semiconductor layer, the resin liquid including a light transmissive resin and a plurality of particles dispersed in the light transmissive resin and configured to absorb at least part of a first light emitted from the light emitting layer and emit a second light of a wavelength different from a wavelength of the first light; causing the plurality of particles in the resin liquid to sink while keeping a state where a temperature of the workpiece on which the resin liquid is applied is raised to a first temperature and forming a first region on a surface side of the resin liquid and a second region provided between the first region and the workpiece and including the particle in a concentration higher than a concentration of the particle in the first region; raising a temperature of the workpiece on which the first region and the second region are formed to a second temperature higher than the first temperature to cure the resin liquid to form an optical layer including a first portion and a second portion, the first portion being formed from the first region, the second portion being formed from the second region and including the particle at a concentration higher than a concentration of the particle in the first portion, there being no seam between the first portion and the second portion; and dividing the optical layer and the resin layer for the plurality of element units. |
地址 |
Minato-ku JP |