Low cost flowable dielectric films

摘要

A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

主权项

1. A method of forming a dielectric layer on a patterned substrate, the method comprising:
Transferring the patterned substrate into a substrate processing region; flowing a silicon precursor into the substrate processing region; flowing a plasma vapor/gas into the substrate processing region, wherein flowing the plasma vapor/gas and flowing the silicon precursor occur concurrently; striking a plasma in the substrate processing region by applying a plasma power less than or about 0.3 W per square centimeter of patterned substrate area; and forming the dielectric layer on the patterned substrate, wherein the dielectric layer comprises silicon and one of nitrogen or carbon and the dielectric layer is flowable during deposition, wherein flowing the silicon precursor comprises supplying a continuous flow of the silicon precursor to the substrate processing region throughout formation of the flowable dielectric layer, and wherein striking a plasma comprises applying a plasma power continuously throughout formation of the flowable dielectric layer.