发明名称 Sputtering and aligning multiple layers having different boundaries
摘要 Provided are methods and systems for forming discreet multilayered structures. Each structure may be deposited by in situ deposition of multiple layers at one of multiple site isolation regions provided on the same substrate for use in combinatorial processing. Alignment of different layers within each structure is provided by using two or more differently sized openings in-between one or more sputtering targets and substrate. Specifically, deposition of a first layer is performed through the first opening that defines a first deposition area. A shutter having a second smaller opening is then positioned in-between the one or more targets and substrate. Sputtering of a second layer is then performed through this second opening that defines a second deposition area. This second deposition area may be located within the first deposition area based on sizing and alignment of the openings as well as alignment of the substrate.
申请公布号 US8889547(B2) 申请公布日期 2014.11.18
申请号 US201314045100 申请日期 2013.10.03
申请人 Intermolecular, Inc. 发明人 Barstow Sean;Fong Owen Ho Yin
分类号 H01L21/44;H01L21/768;C23C14/04;C23C14/34 主分类号 H01L21/44
代理机构 代理人
主权项 1. A method of forming a multilayered structure on a substrate, the method comprising: providing a processing apparatus comprising a first opening and a second opening, the second opening provided on a shutter; sputtering a first layer over the substrate through the first opening; and sputtering a second layer over the first layer through the second opening; wherein the first opening defines a deposition area of the first layer; wherein the second opening defines a deposition area of the second layer; and wherein the deposition area of the second layer is different from the deposition area of the first layer.
地址 San Jose CA US
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