发明名称 Plasma processing apparatus and electrode for same
摘要 A plasma processing apparatus includes a processing chamber that plasma processes a target object therein, first and second electrodes that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and second electrodes to supply high frequency power to the processing chamber. At least one of the first and second electrodes includes a base formed of a metal, a dielectric material provided at a central portion of a plasma side of the base, and a first resistor provided between the dielectric material and plasma, and formed of a metal with a predetermined pattern.
申请公布号 US8888951(B2) 申请公布日期 2014.11.18
申请号 US201012718544 申请日期 2010.03.05
申请人 Tokyo Electron Limited 发明人 Himori Shinji
分类号 C23C16/00;C23F1/00;H01L21/306;H01J37/32 主分类号 C23C16/00
代理机构 Rothwell, Figg, Ernst & Manbeck, P.C. 代理人 Rothwell, Figg, Ernst & Manbeck, P.C.
主权项 1. A plasma processing apparatus comprising: a processing chamber that plasma processes a target object therein, an upper electrode and a lower electrode that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the upper electrode or the lower electrode to supply a high frequency power to the processing chamber, wherein the upper electrode includes: a base formed of a metal; a plate-shaped dielectric material provided at a central portion of a plasma-side of the base, the plate-shaped dielectric material being shaped as a plate without having a tapered edge; and a resistor provided between the plate-shaped dielectric material and the processing space and configured to make an impedance at a central portion of the upper electrode gradually larger than that at a peripheral portion of the upper electrode, the resistor being formed of a metal with a predetermined pattern and the resistor is not in contact with the plate shaped dielectric material; wherein the plate-shaped dielectric material is provided only at a central portion of the plasma-side of the base and the resistor is disposed substantially only within a region directly beneath the plate-shaped dielectric material.
地址 Tokyo JP