发明名称 Heat treatment apparatus and heat treatment method for heating substrate by irradiating substrate with flashes of light
摘要 A photodiode excellent in responsivity receives flashes of light emitted from flash lamps in the process of heating a semiconductor wafer by irradiation with flashes of light, and the waveform of the intensity of the flashes of light versus time is acquired using voltage data obtained from an output from the photodiode. Then, a temperature calculating part performs a heat conduction simulation using the acquired data to calculate the temperature of the semiconductor wafer irradiated with the flashes of light from the flash lamps. The temperature of the semiconductor wafer is computed using data corresponding to the intensity of the flashes of light obtained from the output from the photodiode. This allows the determination of the surface temperature of the semiconductor wafer irradiated with the flashes of light, irrespective of the waveform of the emission intensity of the flash lamps.
申请公布号 US8891948(B2) 申请公布日期 2014.11.18
申请号 US201113109169 申请日期 2011.05.17
申请人 Dainippon Screen Mfg. Co., Ltd. 发明人 Kusuda Tatsufumi;Hashimoto Kazuyuki
分类号 G01J5/10;G01J5/20;G01J5/28;F27B5/18;F27D19/00;H01L21/67;H01L21/687;F27B17/00;F27D11/12 主分类号 G01J5/10
代理机构 Ostrolenk Faber LLP 代理人 Ostrolenk Faber LLP
主权项 1. A heat treatment apparatus for heating a substrate by irradiating the substrate with flashes of light, comprising: a chamber for receiving a substrate; a holder for holding the substrate within said chamber; a flash lamp received in a lamp house and configured to irradiate the substrate held by said holder with flashes of light; a photodiode for receiving the flashes of light directed from said flash lamp before the flashes pass through the substrate; and a temperature calculating part for calculating the temperature of the substrate irradiated with the flashes of light directed from said flash lamp, based on an output from said photodiode.
地址 JP