Memory device and read operation method thereof

摘要

A read operation for a memory device. In response to an input address indicating to read data from a different page, a selected word line, first and second global bit lines and a selected first bit line group are precharged. A first cell current flowing through the selected word line, the first and the selected first bit line groups is generated. A first reference current flowing through the second global bit line group is generated. A first half page data is read based on the first cell current and the first reference current. The selected word line, the first and the second global bit lines are kept precharged. A second cell current flowing through the selected word line is generated. A second reference current is generated. A second half page data is read based on the second cell current and the second reference current.

主权项

1. A read operation method for a memory device, the method comprising:
in response to an input address indicating to read data from a different page, precharging a selected word line of an array cell, a first global bit line group, a second global bit line group and a selected first bit line group; generating a first cell current flowing through the array cell, the first global bit line group and the selected first bit line group, and generating a first reference current flowing through the second global bit line group; reading a first half page data based on the first cell current and the first reference current; keeping the selected word line, the first global bit line group and the second global bit line group in a precharged state; generating a second cell current flowing through the array cell, and generating a second reference current; and reading a second half page data based on the second cell current and the second reference current.