Nitride-based semiconductor light-emitting element

摘要

A nitride-based semiconductor light-emitting element disclosed in the present application includes: an active layer having a growing plane which is an m-plane and which is made of a GaN-based semiconductor; and at least one radiation surface at which light from the active layer is to be radiated. The radiation surface has a plurality of protrusions on the m-plane. A base of each of the plurality of protrusions is a region inside a closed curve, and a shape of the base has a major axis and a minor axis. An angle between the major axis and an extending direction of an a-axis of a crystal is not more than 45°.

主权项

1. A nitride-based semiconductor light-emitting element, comprising:
a light-emitting layer having a growing plane which is an m-plane and being made of a GaN-based semiconductor; and at least one radiation surface at which light from the light-emitting layer is to be radiated, wherein the radiation surface is a surface in which a plurality of protrusions are provided on the m-plane, in the radiation surface, a base of each of the plurality of protrusions is a region inside a closed curve, a shape of the base is an elliptical shape having a major axis which is a line segment extending between two points which are at most distant positions on the closed curve and a minor axis which is a line segment passing through a center of the major axis and intersecting with the major axis at right angles, an ellipticity of the base of each of the plurality of the protrusions falls within the range of not less than 2 and not more than 6.25, the ellipticity defined by a ratio between the major axis and the minor axis of the base, and an angle between the major axis and an extending direction of an a-axis of a crystal is not more than 45° .