发明名称 Semiconductor device, display device, and electronic device
摘要 A load, a transistor which controls a current value supplied to the load, a capacitor, a power supply line, and first to third switches are provided. After a threshold voltage of the transistor is held by the capacitor, a potential in accordance with a video signal is inputted and a voltage that is the sum of the threshold voltage and the potential is held. Accordingly, variation in current value caused by variation in threshold voltage of the transistor can be suppressed. Therefore, a desired current can be supplied to a load such as a light emitting element. In addition, a display device with a high duty ratio can be provided by changing a potential of the power supply line.
申请公布号 US8890180(B2) 申请公布日期 2014.11.18
申请号 US201213691286 申请日期 2012.11.30
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Kimura Hajime
分类号 H01L29/18;H01L27/15;G09G3/32;H01L27/32;G09G3/20 主分类号 H01L29/18
代理机构 Fish & Richardson P.C. 代理人 Fish & Richardson P.C.
主权项 1. A semiconductor device comprising: a first transistor; a second transistor; a third transistor; a fourth transistor; a fifth transistor; a capacitor; and a light emitting element, wherein one of a source and a drain of the first transistor is directly connected to the light emitting element, wherein the other of the source and the drain of the first transistor is electrically connected to a first line, wherein one of a source and a drain of the second transistor is electrically connected to a gate of the first transistor, wherein the other of the source and the drain of the second transistor is electrically connected to a second line, wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor, wherein the other of the source and the drain of the third transistor is electrically connected to the one of the source and the drain of the first transistor, wherein one of a source and a drain of the fourth transistor is electrically connected to the one of the source and the drain of the first transistor, wherein one of a source and a drain of the fifth transistor is electrically connected to the gate of the first transistor, wherein the other of the source and the drain of the fifth transistor is electrically connected to the other of the source and the drain of the first transistor, wherein a first electrode of the capacitor is directly connected to the gate of the first transistor, and wherein a second electrode of the capacitor is directly connected to the one of the source and the drain of the first transistor.
地址 Atsugi-shi, Kanagawa-ken JP