Cleaning formulations and method of using the cleaning formulations

摘要

A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa<9.0, a water-miscible solvent, and a mixture thereof. Employment of such composition exhibits efficient cleaning capability for Al substrates, minimal silicon etch while protecting aluminum for substrates comprising both materials.

主权项

1. A composition useful for removing residue from a semiconductor substrate comprising:
from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: one or more alkanolamines each having a pKa<9.0, propylene glycol, and a mixture thereof, wherein the alkanolamine is selected from the group consisting of: triethanolamine, diethanolamine, diisopropanolamine, N-methyldiethanolamine, and mixtures thereof; andwherein the corrosion inhibitor is selected from the group consisting of: one or more linear or branched C1-C6 alkyl dihydroxybenzenes, one or more hydroxyquinolines, and mixtures thereof.