发明名称 On-chip RF shields with backside redistribution lines
摘要 Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region, the first region comprising devices for RF circuitry and the second region comprising devices for other circuitry. The method further includes forming patterns for redistribution lines on a photo resist layer, the photo resist layer disposed under the back surface, and filling the through substrate opening and the patterns for redistribution lines with a conductive material.
申请公布号 US8889548(B2) 申请公布日期 2014.11.18
申请号 US201113084105 申请日期 2011.04.11
申请人 Infineon Technologies AG 发明人 Barth Hans-Joachim;Pohl Jens;Beer Gottfried;Koerner Heinrich
分类号 H01L29/72;H01L23/552;H01L21/768;H01L23/48;H01L23/66 主分类号 H01L29/72
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A method of forming a system on chip, the method comprising: forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region of the substrate, the first region comprising devices for RF circuitry proximate a top surface opposite the back surface and the second region comprising devices for other circuitry proximate the top surface opposite the back surface; forming patterns for redistribution lines within a photo resist layer disposed at the back surface; and forming a redistribution layer comprising first and second redistribution lines and forming a through substrate conductor by filling the through substrate opening and the patterns for redistribution lines with a conductive material, wherein the first redistribution lines are formed under the first region and isolated from the substrate by an insulating layer, wherein the second redistribution lines are formed under the second region and coupled to active circuitry, wherein the first redistribution lines are coupled to a ground potential node by the through substrate conductor.
地址 Neubiberg DE