Method for forming a dopant profile

摘要

A method is provided for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant. The method includes the steps of applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the precipitates SixPy and SixPyOz are removed.

主权项

1. A method for forming a dopant profile proceeding from a surface of a plate-shaped or wafer-shaped silicon-based semiconductor device with phosphorus as a dopant, comprising:
applying a phosphorus dopant source onto the surface; forming a first dopant profile with the phosphorus dopant source present on the surface; removing the phosphorus dopant source and precipitates present on the surface, the precipitates being selected from the group consisting of SixPy, SixPyOz, and combinations thereof; and forming a second dopant profile having greater depth in comparison to the first dopant profile.