III-Nitride light-emitting devices with reflective engineered growth templates and manufacturing method

摘要

A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.

主权项

1. A light-emitting device comprising:
a first mirror having a first face and an opposite second face and having a lattice constant, wherein the first mirror includes a metal; and an epitaxial structure, wherein the epitaxial structure covers at least a portion of the first face of the first mirror and has a lattice constant that substantially matches the lattice constant of the first mirror, the epitaxial structure having an active region configured to emit light, wherein the active region is separated by a first distance from the first face of the first mirror such that the active region is located at or substantially at an antinode of a first standing optical wave produced by interference of light emitted from the active region with light reflected by the first mirror to form at least one extraction mode.