| 发明名称 |
Hybrid circuit of nitride-based transistor and memristor |
| 摘要 |
A hybrid circuit comprises a nitride-based transistor portion and a memristor portion. The transistor includes a source and a drain and a gate for controlling conductance of a channel region between the source and the drain. The memristor includes a first electrode and a second electrode separated by an active switching region. The source or drain of the transistor forms one of the electrodes of the memristor. |
| 申请公布号 |
US8890106(B2) |
申请公布日期 |
2014.11.18 |
| 申请号 |
US201213718689 |
申请日期 |
2012.12.18 |
| 申请人 |
Hewlett-Packard Development Company, L.P. |
发明人 |
Yang Jianhua;Ribeiro Gilberto Medeiros;Choi Byung-Joon;Williams Stanley |
| 分类号 |
H01L29/02;H01L27/04;H01L21/77 |
主分类号 |
H01L29/02 |
| 代理机构 |
|
代理人 |
Collins David W. |
| 主权项 |
1. A hybrid circuit comprising a nitride-based transistor portion and a memristor portion, in which:
the transistor includes a source and a drain and a gate for controlling conductance of a channel region between the source and the drain: and the memristor includes a first electrode and a second electrode separated by an active switching region, wherein the source or drain of the transistor forms one of the electrodes of the memristor, wherein the nitride-based transistor comprises a high electron mobility transistor (HEMT) and the active region of the memristor is nitride-based. |
| 地址 |
Houston TX US |
