Polysilicon thin film transistor device and method of fabricating the same

摘要

A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating film, the polysilicon semiconductor layer including an active region, lightly doped drain regions, a source region, and a drain region, a source electrode connected to the source region and a drain electrode connected to the drain region on the polysilicon semiconductor layer, and a pixel electrode connected with the drain electrode.

主权项

1. A method of fabricating a polysilicon thin film transistor device, comprising:
forming a gate metal pattern made of a single layer of a singular metal material having a stepped portion formed on a substrate, wherein either side of the stepped portion of the gate metal pattern has a different thickness; forming a gate insulating film on the gate metal pattern; forming a polysilicon semiconductor layer on the gate insulating film; forming an active region, lightly doped drain regions, a source region and a drain region on the polysilicon semiconductor layer by implanting an impurities; forming a source electrode electrically connected to the source region and forming a drain electrode electrically connected to the drain region; and forming a pixel electrode connected to the drain electrode, wherein the gate metal pattern comprises a gate electrode and a gate line, wherein the gate electrode and the gate line are formed of the same singular metal material in the same single layer, and wherein the gate electrode has a thickness less than a thickness of the gate line.