| 发明名称 | Method for manufacturing semiconductor device | ||
| 摘要 | Provided is a method for manufacturing a semiconductor device which includes, on a wafer which has a notch, a plurality of transistors parallel with and perpendicular to a notch direction extending between the center of the wafer and the notch, the method including: preparing the wafer having the front surface which has Off angle of at least 2 degrees and at most 2.8 degrees from plane in a direction in which Twist angle relative to the notch direction is at least 12.5 degrees and at most 32.5 degrees; and doping impurities into the front surface of the wafer in a direction perpendicular to the front surface. | ||
| 申请公布号 | US8889503(B2) | 申请公布日期 | 2014.11.18 |
| 申请号 | US201314104289 | 申请日期 | 2013.12.12 |
| 申请人 | Panasonic Corporation | 发明人 | Yoneda Kenji |
| 分类号 | H01L21/336;H01L21/265;H01L21/687;H01L29/66;H01L29/04 | 主分类号 | H01L21/336 |
| 代理机构 | Wenderoth, Lind & Ponack, L.L.P. | 代理人 | Wenderoth, Lind & Ponack, L.L.P. |
| 主权项 | 1. A method for manufacturing a semiconductor device which includes, on a semiconductor substrate having a notch, a plurality of transistors in parallel with and perpendicular to a notch direction extending between a center of the semiconductor substrate and the notch, the method comprising: preparing the semiconductor substrate which has a front surface having an Off angle of at least 2 degrees and at most 2.8 degrees from (100) plane in a direction in which a Twist angle relative to the notch direction is at least 12.5 degrees and at most 32.5 degrees; and doping impurities into the front surface of the semiconductor substrate in a direction perpendicular to the front surface. | ||
| 地址 | Osaka JP | ||