Group III nitride semiconductor light-emitting element and method for producing the same

摘要

A method for producing a group III nitride semiconductor light-emitting device, by which a non-light-emitting region is easily formed, is disclosed. Mg is activated to convert a p-type layer into p-type, and a p-electrode is then formed on the p-type layer. An Ag paste is applied to a region on the p-electrode and overlapping an n-electrode formed in a subsequent step. Heat treatment is conducted to solidify the Ag paste, thereby forming an Ag paste solidified body. By this, a region overlapping the Ag paste solidified body in a planar view, of the p-type layer converts into a region having high resistance, and a high resistance region is formed. As a result, a region overlapping the high resistance region in a planar view, of a light-emitting layer becomes a non-light-emitting region.

主权项

1. A method for producing a group III nitride semiconductor light-emitting device having a part of a region of a light-emitting layer as a non-light-emitting region, the method comprising:
sequentially laminating an n-type layer, a light-emitting layer and a p-type layer comprising a group III nitride semiconductor on a growth substrate; activating the p-type layer to p-type activation by heat treatment and then forming a p-contact electrode on the p-type layer; applying a metal paste comprising conductive metal particles dispersed in a solvent comprising a material containing hydrogen as a constituent element, to a desired region on the p-contact electrode; and solidifying the metal paste by heat treatment to form a part of a region of the p-type layer into a high resistance region, thereby forming a region overlapping a region having the metal paste applied thereto in a planar view, of the light-emitting layer into a non-light-emitting region.