发明名称 Spin-on anti-reflective coatings for photolithography
摘要 Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compounds and at least one pH tuning agent that are incorporated into spin-on materials. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography. Suitable pH tuning agents not only adjust the pH of the final spin-on composition, but also influence the chemical performance and characteristics, mechanical performance and structural makeup of the final spin-on composition that is part of the layered material, electronic component or semiconductor component, such that the final spin-on composition is more compatible with the resist material that is coupled to it. A method of making absorbing and pH tuned spin-on materials includes combining at least one organic absorbing compound and at least one pH tuning agent with at least one silane reactant during synthesis of the spin-on materials and compositions.
申请公布号 US8889334(B2) 申请公布日期 2014.11.18
申请号 US201213692444 申请日期 2012.12.03
申请人 Honeywell International Inc. 发明人 Kennedy Joseph T;Baldwin-Hendricks Teresa
分类号 G03F7/00;G03F7/11;G03F7/075 主分类号 G03F7/00
代理机构 Faegre Baker Daniels LLP 代理人 Faegre Baker Daniels LLP
主权项 1. An absorbing spin-on-glass composition comprising: at least one inorganic-based compound, at least one organic absorbing compound chemically bonded to the at least one inorganic-based compound, and at least one pH tuning agent comprising a base.
地址 Morristown NJ US