Nonvolatile semiconductor memory device

摘要

A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.

主权项

1. A nonvolatile semiconductor memory device comprising:
a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer formed on the tunnel insulating film, the organic molecular layer including first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film, the second organic molecules each having a permanent dipole; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film, wherein in a case where positive charges are stored in the charge storage portion, an orientation of the permanent dipole is positive on the side of the semiconductor layer and negative on the side of the block insulating film, and in a case where negative charges are stored in the charge storage portion, an orientation of the permanent dipole is negative on the side of the semiconductor layer and positive on the side of the block insulating film.