Semiconductor device

摘要

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention.

主权项

1. A semiconductor device comprising:
a gate electrode; a gate insulating film; a pair of electrodes; and an n-type oxide semiconductor film which overlaps with the gate electrode with the gate insulating film interposed therebetween and is in contact with the pair of electrodes, wherein the n-type oxide semiconductor film contains a p-type oxide semiconductor material, and wherein the n-type oxide semiconductor film comprises a channel formation region of a transistor, the channel formation region overlapping with the gate electrode.